Room Temperature, Intrinsic Vacancy Mediated Ferromagnetism in Cr:Ga2Se3/Si
نویسندگان
چکیده
E. N. Yitamben, ∗ T. C. Lovejoy, A. B. Pakhomov, S. M. Heald, F. S. Ohuchi, and M. A. Olmstead Department of Physics, and Center for Nanotechnology (CNT), University of Washington, Box 351560, Seattle, Washington 98195, USA Department of Materials Science and Engineering, and Center for Nanotechnology (CNT), University of Washington, Box 352120, Seattle, Washington 98195, USA Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA (Dated: July 5, 2010)
منابع مشابه
Correlation between Morphology, Chemical Environment, and Ferromagnetism in the Intrinsic-Vacancy Dilute Magnetic Semiconductor Cr-doped Ga2Se3/Si(001)
Chromium-doped gallium sesquiselenide, Cr:Ga2Se3, is a member of a new class of dilute magnetic semiconductor exploiting intrinsic vacancies in the host material. The correlation among room-temperature ferromagnetism, surface morphology, electronic structure, chromium concentration and local chemical and structural environments in Cr:Ga2Se3 films grown epitaxially on silicon is investigated wit...
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